DocumentCode
987832
Title
Tunnelling in aluminium/aluminium-oxide/palladium junctions: hydrogen-induced variations
Author
Diligenti, A. ; Stagi, M.
Author_Institution
UniversitÃ\xa0 di Pisa, Istituto di Elettronica e Telecomunicazioni, Pisa, Italy
Volume
19
Issue
18
fYear
1983
Firstpage
717
Lastpage
718
Abstract
The tunnel current of aluminium/aluminium-oxide/palladium (Al/Al2O3/Pd) junctions, obtained by means of sapphire sputtering, has been measured in air and in hydrogen-nitrogen atmosphere at various H2 concentrations ranging from 2 to 100% and at room temperature. It has been found that the tunnel current undergoes a significant change as a consequence of Pd work function lowering induced by the hydrogen. The ratio between the tunnel current in H2 and in air has a value in the range 102¿106, depending on the oxide thickness. The increase of the current occurs in some hundreds of milliseconds if the hydrogen is emitted at atmospheric pressure.
Keywords
alumina; aluminium; metal-insulator-metal structures; palladium; tunnelling; work function; Al/Al2O3/Pd; H2 concentrations; MIM structure; Pd work function lowering; alumina; metal-insulator-metal junctions; sapphire sputtering; tunnel current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830488
Filename
4247989
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