• DocumentCode
    987832
  • Title

    Tunnelling in aluminium/aluminium-oxide/palladium junctions: hydrogen-induced variations

  • Author

    Diligenti, A. ; Stagi, M.

  • Author_Institution
    UniversitÃ\xa0 di Pisa, Istituto di Elettronica e Telecomunicazioni, Pisa, Italy
  • Volume
    19
  • Issue
    18
  • fYear
    1983
  • Firstpage
    717
  • Lastpage
    718
  • Abstract
    The tunnel current of aluminium/aluminium-oxide/palladium (Al/Al2O3/Pd) junctions, obtained by means of sapphire sputtering, has been measured in air and in hydrogen-nitrogen atmosphere at various H2 concentrations ranging from 2 to 100% and at room temperature. It has been found that the tunnel current undergoes a significant change as a consequence of Pd work function lowering induced by the hydrogen. The ratio between the tunnel current in H2 and in air has a value in the range 102¿106, depending on the oxide thickness. The increase of the current occurs in some hundreds of milliseconds if the hydrogen is emitted at atmospheric pressure.
  • Keywords
    alumina; aluminium; metal-insulator-metal structures; palladium; tunnelling; work function; Al/Al2O3/Pd; H2 concentrations; MIM structure; Pd work function lowering; alumina; metal-insulator-metal junctions; sapphire sputtering; tunnel current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830488
  • Filename
    4247989