Title :
Analytical model and parameter extraction to account for the pad parasitics in RF-CMOS
Author :
Torres-Torres, Reydezel ; Murphy-Arteaga, Roberto ; Reynoso-Hernández, J. Apolinar
Author_Institution :
Dept. of Electron., Inst. Nacional de Astrofisica, Puebla, Mexico
fDate :
7/1/2005 12:00:00 AM
Abstract :
A model which considers the pad parasitic effects when performing on-wafer S-parameter measurements on microwave devices fabricated on silicon substrates is presented. The model parameters are directly determined using a simple and analytical measurement-based method, allowing the electrical representation of the complete test structure using an equivalent circuit. The validity of the model is verified by achieving excellent agreement between simulated and experimental data up to 55GHz. In addition, a recently reported simplified deembedding procedure is improved and compared to a conventional one to study its validity as frequency increases.
Keywords :
CMOS integrated circuits; S-parameters; equivalent circuits; integrated circuit modelling; microwave integrated circuits; microwave measurement; parameter estimation; silicon; RF-CMOS; analytical model; electrical representation; equivalent circuit; microwave devices; on-wafer S-parameter measurement; on-wafer microwave measurement; pad parasitics; parameter extraction; Analytical models; Circuit testing; Electric variables measurement; Equivalent circuits; Microwave devices; Microwave measurements; Parameter extraction; Performance evaluation; Scattering parameters; Silicon; Modeling; RF-CMOS; on-wafer microwave measurements; parameter extraction;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.850644
