Title :
InxGa1¿xAs-epitaxy with metalorganic adducts
Author :
Speier, P. ; Scholz, F. ; Benz, K.W. ; Renz, H. ; Weidlein, J.
Author_Institution :
Universitÿt Stuttgart, Physikalisches Institut, Kristallabor, Stuttgart, West Germany
Abstract :
Two metalorganic adducts (trimethylindium-trimethylarsine (CH3)3In-As(CH3)3 and trimethylgallium-trimethylarsine (CH3)3Ga-As(CH3)3) have been used for the epitaxial growth of InxGa1¿xAs on InP, and GaAs, substrates at normal pressure. Epitaxial layers with net carrier concentrations of n = 2 × 1016 cm¿3, ¿300K = 6600 cm2/Vs (In0.53Ga0.47As/InP) and n¿ = 1 × 1016 cm¿3, ¿¿ = 3200 cm2/Vs (In0.2Ga0.8As/GaAs) have been grown.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; (CH3)3Ga-As(CH3)3; (CH3)3In-As(CH3)3; GaAs substrates; III-V semiconductors; InP substrate; InxGa1-xAs; MOCVD; VPE; carrier concentrations; epitaxial growth; metalorganic adducts; trimethylgallium-trimethylarsine; trimethylindium-trimethylarsine;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830495
