• DocumentCode
    987904
  • Title

    InxGa1¿xAs-epitaxy with metalorganic adducts

  • Author

    Speier, P. ; Scholz, F. ; Benz, K.W. ; Renz, H. ; Weidlein, J.

  • Author_Institution
    Universitÿt Stuttgart, Physikalisches Institut, Kristallabor, Stuttgart, West Germany
  • Volume
    19
  • Issue
    18
  • fYear
    1983
  • Firstpage
    728
  • Lastpage
    729
  • Abstract
    Two metalorganic adducts (trimethylindium-trimethylarsine (CH3)3In-As(CH3)3 and trimethylgallium-trimethylarsine (CH3)3Ga-As(CH3)3) have been used for the epitaxial growth of InxGa1¿xAs on InP, and GaAs, substrates at normal pressure. Epitaxial layers with net carrier concentrations of n = 2 × 1016 cm¿3, ¿300K = 6600 cm2/Vs (In0.53Ga0.47As/InP) and n¿ = 1 × 1016 cm¿3, ¿¿ = 3200 cm2/Vs (In0.2Ga0.8As/GaAs) have been grown.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; (CH3)3Ga-As(CH3)3; (CH3)3In-As(CH3)3; GaAs substrates; III-V semiconductors; InP substrate; InxGa1-xAs; MOCVD; VPE; carrier concentrations; epitaxial growth; metalorganic adducts; trimethylgallium-trimethylarsine; trimethylindium-trimethylarsine;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830495
  • Filename
    4247998
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=987904