• DocumentCode
    988078
  • Title

    Positive and negative charge generation by hot carriers in n-MOSFETs

  • Author

    Borchert, Bernd ; Hofmann, Karl Rudiger ; Dorda, G.

  • Author_Institution
    Siemens AG, Central Research & Development, Microelectronics, Mÿnchen, West Germany
  • Volume
    19
  • Issue
    18
  • fYear
    1983
  • Firstpage
    746
  • Lastpage
    747
  • Abstract
    By means of the charge pumping (CP) method the degradation effects in the oxide near drain have been sensitively investigated. Both negative and positive charges have been observed together with their distribution. These results can be explained by the two-dimensional electric-field configuration near drain.
  • Keywords
    high field effects; hole traps; hot carriers; insulated gate field effect transistors; charge distribution; charge pumping method; degradation effects; drain; high field effects; hole traps; hot carriers; n-channel MOSFET; negative charge generation; oxide; positive charges; two-dimensional electric-field configuration;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830508
  • Filename
    4248014
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=988078