Title :
Positive and negative charge generation by hot carriers in n-MOSFETs
Author :
Borchert, Bernd ; Hofmann, Karl Rudiger ; Dorda, G.
Author_Institution :
Siemens AG, Central Research & Development, Microelectronics, Mÿnchen, West Germany
Abstract :
By means of the charge pumping (CP) method the degradation effects in the oxide near drain have been sensitively investigated. Both negative and positive charges have been observed together with their distribution. These results can be explained by the two-dimensional electric-field configuration near drain.
Keywords :
high field effects; hole traps; hot carriers; insulated gate field effect transistors; charge distribution; charge pumping method; degradation effects; drain; high field effects; hole traps; hot carriers; n-channel MOSFET; negative charge generation; oxide; positive charges; two-dimensional electric-field configuration;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830508
