DocumentCode :
988090
Title :
Electrical properties of staggered electrode, solution-processed, polycrystalline tetrabenzoporphyrin field-effect transistors
Author :
Shea, Patrick B. ; Johnson, Aaron R. ; Ono, Noboru ; Kanicki, Jerzy
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Volume :
52
Issue :
7
fYear :
2005
fDate :
7/1/2005 12:00:00 AM
Firstpage :
1497
Lastpage :
1503
Abstract :
We characterize and analyze the electrical performance of solution-processed, polycrystalline tetrabenzoporphyrin thin-film field-effect transistors with staggered source and drain contacts. Devices demonstrated a saturation field-effect mobility and threshold voltage on the order of 10-2 cm2/V-s and -15 V, respectively, as well as a subthreshold slope of 1.2 V/decade and an ON-/OFF-current ratio exceeding 105. The device performance and electronic properties of the thin film were used to construct device energy band diagrams. Lastly, the device conduction mechanism is discussed.
Keywords :
conduction bands; electric properties; electron mobility; field effect transistors; molecular electronics; organic compounds; semiconductor device testing; thin film transistors; current ratio; electrical property; field-effect mobility; polycrystalline tetrabenzoporphyrin field-effect transistor; staggered electrode; thin film; threshold voltage; Contacts; Costs; Dielectric substrates; Electrodes; FETs; OFETs; Organic materials; Organic semiconductors; Performance analysis; Thin film transistors; Absorbance; cyclic voltammetry; organic field-effect transistors (OFETs); porphyrins; solution processing; staggered electrodes;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2005.850616
Filename :
1459110
Link To Document :
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