DocumentCode
988093
Title
High-performance millimetre-wave mixer diodes fabricated using a deep mesa etch approach
Author
Heaton, J.L. ; Fabian, W. ; Spooner, F. ; Kraemer, E.H.
Author_Institution
Sperry Research Center, Sudbury, USA
Volume
19
Issue
19
fYear
1983
Firstpage
749
Lastpage
750
Abstract
Schottky-barrier junction mixer diodes compatible with monolithic integration have been fabricated on semi-insulating GaAs substrates using buried VPE n+ layers and deep mesa etch processing. A 590 GHz cutoff frequency was determined using modified DeLoach analysis and fin-line chip mounting. A 5.3 dB (SSB) noise figure and a 4.8 dB conversion loss were obtained at 35 GHz for a pair of chips in a balanced microstrip mixer.
Keywords
III-V semiconductors; Schottky-barrier diodes; gallium arsenide; mixers (circuits); solid-state microwave devices; 35 GHz; 590 GHz cutoff frequency; DeLoach analysis; MM wave mixer diode; Schottky-barrier junction mixer diodes; balanced microstrip mixer; buried VPE n+ layers; conversion loss; deep mesa etch approach; fin-line chip mounting; monolithic integration; noise figure; semiinsulating GaAs substrates;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830510
Filename
4248018
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