Title :
High-performance millimetre-wave mixer diodes fabricated using a deep mesa etch approach
Author :
Heaton, J.L. ; Fabian, W. ; Spooner, F. ; Kraemer, E.H.
Author_Institution :
Sperry Research Center, Sudbury, USA
Abstract :
Schottky-barrier junction mixer diodes compatible with monolithic integration have been fabricated on semi-insulating GaAs substrates using buried VPE n+ layers and deep mesa etch processing. A 590 GHz cutoff frequency was determined using modified DeLoach analysis and fin-line chip mounting. A 5.3 dB (SSB) noise figure and a 4.8 dB conversion loss were obtained at 35 GHz for a pair of chips in a balanced microstrip mixer.
Keywords :
III-V semiconductors; Schottky-barrier diodes; gallium arsenide; mixers (circuits); solid-state microwave devices; 35 GHz; 590 GHz cutoff frequency; DeLoach analysis; MM wave mixer diode; Schottky-barrier junction mixer diodes; balanced microstrip mixer; buried VPE n+ layers; conversion loss; deep mesa etch approach; fin-line chip mounting; monolithic integration; noise figure; semiinsulating GaAs substrates;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830510
