Title :
High-speed Schottky photodiode on semi-insulating GaAs
Author :
Rav-Noy, Z. ; Harder, Christian ; Schreter, U. ; Margalit, S. ; Yariv, Amnon
Author_Institution :
California Institute of Technology, Pasadena, USA
Abstract :
A high-speed GaAs photodiode has been fabricated on a GaAs semi-insulating substrate. The photodiode has an active area of 8 ¿m × 15 ¿m and a bandwidth in excess of 9 GHz. This Schottky photodiodes is suitable for monolithic integration with other optoelectronic components.
Keywords :
III-V semiconductors; Schottky-barrier diodes; gallium arsenide; photodiodes; GaAs semiinsulating substrate; Schottky photodiode; high-speed GaAs photodiode; monolithic integration; small area photodiode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830513
