Title :
High-peak-power asymmetric double-heterostructure (GaAl)As-GaAs injection laser
Author :
Samid, I. ; Benedek, M. ; Mirsky, U. ; Yust, M.
Author_Institution :
MOD, Haifa, Israel
Abstract :
An asymmetric double-heterostructure pulsed-power laser is described. This laser exhibits low-temperature sensitivity of optical power in the operating temperature range of ¿40 to +90°C. The threshold current is below 10 A at 90°C. The power loss at 40 A and 90°C operation is at least a factor of two less severe for this structure compared to that of the single heterostructure.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; (GaAl)As-GaAs injection laser; -40 to 90 degrees C; DH laser; asymmetric double-heterostructure pulsed-power laser; low-temperature sensitivity; optical power; power loss; semiconductor laser; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830514
