DocumentCode :
988193
Title :
Blue Electroluminescence From Metal/Oxide/6H-SiC Tunneling Diodes
Author :
Jan, Sun-Rong ; Cheng, Tzu-Huan ; Hung, Tzer-An ; Kuo, Ping-Sheng ; Liao, Ming Han ; Deng, Yu ; Liu, Chee Wee
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ, Taipei
Volume :
55
Issue :
12
fYear :
2008
Firstpage :
3590
Lastpage :
3593
Abstract :
The tunneling current of Pt/oxide/n-6H-SiC tunneling diodes was used for electroluminescence (EL). The negative gate bias can inject electrons from Pt to n-SiC and leads to a radiative donor-acceptor pair (DAP) transition. The blue EL at room temperature is observed at negative gate bias, and the intensity increases with increasing drive current. The DAP transition is enhanced by the electric field due to carrier tunneling. Thus, strong luminescence is observed at negative (inversion) bias, while no luminescence is observed at positive (accumulation) bias.
Keywords :
MIS devices; electroluminescent devices; light emitting diodes; platinum; silicon compounds; tunnel diodes; wide band gap semiconductors; DAP transition; Pt-SiO2-SiC; blue electroluminescence; carrier tunneling; metal-insulator-semiconductor light-emitting diode; negative gate bias; radiative donor-acceptor pair transition; temperature 293 K to 298 K; tunneling current; tunneling diodes; Digital audio players; Electroluminescence; Germanium silicon alloys; Light emitting diodes; Luminescence; Photonic band gap; Semiconductor diodes; Silicon carbide; Silicon germanium; Tunneling; 6H-Silicon carbide (SiC); Electroluminescence (EL); metal–insulator–semiconductor (MIS) light-emitting diode (LED);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2008.2006117
Filename :
4674551
Link To Document :
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