Total ionizing dose effects on the noise performances of a 0.13 μm CMOS technology

Author

Re, Valerio ; Manghisoni, Massimo ; Ratti, Lodovico ; Speziali, Valeria ; Traversi, Gianluca

Author_Institution

Universita di Bergamo, Pavia, Italy

Volume

53

Issue

3

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

1599

Lastpage

1606

Abstract

This paper presents a study of the ionizing radiation tolerance of 0.13 μm CMOS transistors, in view of the application to the design of rad-hard analog integrated circuits. Static, signal and noise parameters of the devices were monitored before and after irradiation with ⁶⁰Co γ-rays at a 10 Mrad total ionizing dose. The effects on key parameters such as threshold voltage shift and 1/f noise are studied and compared with the behavior under irradiation of devices in previous CMOS generations.

Keywords

1/f noise; CMOS analogue integrated circuits; gamma-ray effects; monolithic integrated circuits; semiconductor device noise; 1/f noise; ⁶⁰Co irradiation; CMOS transistors; ionizing radiation tolerance; noise performances; rad-hard analog integrated circuits; signal-noise parameters; static parameters; threshold voltage shift; total ionizing dose effects; Analog integrated circuits; CMOS analog integrated circuits; CMOS technology; Condition monitoring; Integrated circuit noise; Integrated circuit technology; Ionizing radiation; Noise generators; Radiation hardening; Threshold voltage; Deep submicron; MOSFET; ionizing radiation; noise;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2006.871802

Filename

1645076