Efficiencies of coated and perforated semiconductor neutron detectors

Author

Shultis, J. Kenneth ; McGregor, Douglas S.

Author_Institution

Mech. & Nucl. Eng. Dept., Kansas State Univ., Manhattan, KS, USA

Volume

53

Issue

3

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

1659

Lastpage

1665

Abstract

Previous experimental results indicated that boron-filled perforations within a semiconductor diode detector increase the thermal neutron detection efficiency. In this paper, two basic perforation designs, circular holes and parallel trenches, are analyzed using a simple Monte Carlo model to estimate their potential as high-efficiency thermal neutron detectors. The modeling results indicate that thermal-neutron intrinsic detection efficiencies exceeding 25% can be realized for single coated devices, and efficiencies exceeding 50% can be realized for doubled or "sandwiched" devices.

Keywords

Monte Carlo methods; neutron detection; semiconductor counters; boron-filled perforation design; circular holes; coated semiconductor neutron detectors; doubled devices; parallel trenches; perforated semiconductor neutron detectors; sandwiched devices; semiconductor diode detector; simple Monte Carlo model; single coated devices; thermal neutron detectors; Coatings; Detectors; Electromagnetic wave absorption; Helium; Microscopy; Monte Carlo methods; Neutrons; Semiconductor diodes; Semiconductor materials; Stationary state; Perforated detector; semiconductor neutron detector;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2006.872639

Filename

1645084