The fast neutron response of 4H silicon carbide semiconductor radiation detectors

Author

Ruddy, Frank H. ; Dulloo, Abdul R ; Seidel, John G. ; Das, Mrinal K. ; Ryu, Sei-Hyung ; Agarwal, Anant K.

Author_Institution

Dept. of Sci. & Technol., Westinghouse Electr. Corp., Pittsburgh, PA, USA

Volume

53

Issue

3

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

1666

Lastpage

1670

Abstract

Fast neutron response measurements are reported for radiation detectors based on large-volume SiC p-i-n diodes. Multiple reaction peaks are observed for 14-MeV neutron reactions with the silicon and carbon nuclides in the SiC detector. A high degree of linearity is observed for the ²⁸Si(n,α_i) reaction set of six energy levels in the product ²⁵Mg nucleus, and pulse height defect differences between the observed ¹²C(n,α₀)²⁸ Si(n,α_i) energy responses are discussed. Energy spectrometry applications in fission and fusion neutron fields are also discussed.

Keywords

alpha-particle detection; neutron-nucleus reactions; nuclei with mass number 20 to 38; nuclei with mass number 6 to 19; silicon radiation detectors; 4H silicon carbide semiconductor radiation detectors; ¹²C(n,alpha₀); ²⁸Si(n,alpha_i); SiC p-i-n diodes; energy spectrometry; fast neutron response; fission neutron fields; fusion neutron fields; multiple reaction peaks; neutron spectroscopy; pulse height defect differences; radiation detection; Gamma ray detection; Gamma ray detectors; Neutrons; Permission; Radiation detectors; Schottky diodes; Semiconductor radiation detectors; Silicon carbide; Spectroscopy; Temperature; Neutron spectroscopy; radiation detection; silicon carbide;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2006.875151

Filename

1645085