DocumentCode :
988342
Title :
The LHCb VELO: status and upgrade developments
Author :
Bates, Alison G. ; Borel, Jeremie ; Buytaert, Jan ; Collins, Paula ; Eckstein, Doris ; Eklund, Lars ; Ferro-Luzzi, Massimiliano ; Jans, Eddy ; Kennedy, John ; Ketel, Tjeerd ; Moll, Michael ; Palacios, Juan ; Parkes, Chris ; Parzefall, Ulrich ; Petrie, Dav
Author_Institution :
PH Dept., CERN, Geneva, Switzerland
Volume :
53
Issue :
3
fYear :
2006
fDate :
6/1/2006 12:00:00 AM
Firstpage :
1689
Lastpage :
1693
Abstract :
The VErtex LOcator (VELO) is the silicon microstrip vertexing and triggering sub-detector of the LHCb experiment. It consists of a series of forward disks with the active region extending to just 8 mm from the LHC beams. The current status of the VELO is presented. Due to the high radiation environment, the VELO may have to be replaced after some years, possibly with new materials. A candidate material is Czochralski silicon. We present here promising new results on the first test beam of a large, high resistivity Czochralski microstrip silicon detector read out with LHC speed electronics. The performance was studied before and after irradiation with high energy protons. A signal to noise of over 20:1 was obtained from the detector and significant charge collection efficiencies were measured at relatively modest voltages after a fluence of 4.3×1014 1 MeV neutron equivalents (neq) per cm2. Studies using the Transient Current Technique probed the electric field within MCz test detectors and proved that MCz silicon does not type invert up until a radiation level of at least 5×1014 24GeV/c p/cm2. This would mean the VELO could possibly replace, in a potential upgrade, n+-on-n DOFZ sensors and the complicated processing involved, for standard p+-on-n processing with MCz.
Keywords :
proton effects; readout electronics; silicon radiation detectors; Czochralski silicon; DOFZ sensors; LHC speed electronics; LHCb VELO; VErtex LOcator; charge collection efficiencies; high energy proton irradiation; high radiation environment; high resistivity Czochralski microstrip silicon detector read out; silicon microstrip vertexing and triggering subdetector; Charge measurement; Conductivity; Current measurement; Detectors; Electronic equipment testing; Large Hadron Collider; Microstrip; Noise measurement; Protons; Silicon; Czochralski silicon; LHCb; irradiation; test beam; vertex detector;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2006.875764
Filename :
1645088
Link To Document :
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