Title :
Analytic solution of the channel potential in undoped symmetric dual-gate MOSFETs
Author :
Ortiz-Conde, Adelmo ; García-Sánchez, Francisco J. ; Malobabic, Slavica
Author_Institution :
Solid State Electron. Lab., Simon Bolivar Univ., Caracas, Venezuela
fDate :
7/1/2005 12:00:00 AM
Abstract :
We extend our previous Lambert function-based analytic solution for the surface potential of undoped-body single-gate bulk MOSFETs to offer an explicit analytic solution of the surface potential of undoped-body symmetric dual-gate devices. The error produced by the proposed solution compared to exact results is reasonably small for typical device dimensions and bias conditions.
Keywords :
MOSFET; semiconductor device models; surface potential; Lambert function; MOS compact modeling; bias conditions; channel potential; intrinsic channel; surface potential; symmetric DG MOSFET; undoped body MOS; undoped symmetric dual-gate MOSFET; undoped-body single-gate bulk MOSFET; undoped-body symmetric dual-gate devices; Degradation; Doping; Equations; MOSFET circuits; Nanoscale devices; Potential well; Semiconductor device modeling; Semiconductor films; Silicon on insulator technology; Voltage; Intrinsic channel; MOS compact modeling; symmetric DG MOSFET; undoped body MOS;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.850629
