• DocumentCode
    988510
  • Title

    Noise and responsivity of commercial p+n Ge avalanche photodiodes

  • Author

    Brain, M.C.

  • Author_Institution
    British Telecom Research Laboratories, Ipswich, UK
  • Volume
    19
  • Issue
    20
  • fYear
    1983
  • Firstpage
    813
  • Lastpage
    815
  • Abstract
    Commercial p+n Ge APD samples from two manufacturers are shown to have comparable noise and responsivity, characterised by a quantum efficiency at 1.3 ¿m wavelength of 0.7¿0.75, and a bulk leakage current density at 20 C of 2¿3×10¿4 A cm¿2 before avalanche multiplication. Surface uniformity of avalanche gain is much better than on earlier n+p devices of the same diameter (100 ¿m).
  • Keywords
    avalanche photodiodes; electron device noise; elemental semiconductors; germanium; photodetectors; Ge avalanche photodiodes; avalanche gain; bulk leakage current density; commercial devices; electron device noise; elemental semiconductors; noise; p+n structure photodetectors; quantum efficiency; responsivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830555
  • Filename
    4248074
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=988510