Title :
The Destruction Mechanism in GCTs
Author :
Lophitis, N. ; Antoniou, M. ; Udrea, F. ; Bauer, Friedhelm D. ; Nistor, I. ; Arnold, Martin ; Wikstrom, Tobias ; Vobecky, J.
Author_Institution :
Dept. of Eng., Univ. of Cambridge, Cambridge, UK
Abstract :
This paper focuses on the causes that lead to the final destruction in standard gate-commutated thyristor (GCT) devices. A new 3-D model approach has been used for simulating the GCT which provides a deep insight into the operation of the GCT in extreme conditions. This allows drawing some conclusions on the complex mechanisms that drive these devices to destruction, previously impossible to explain using 2-D models.
Keywords :
semiconductor device models; thyristors; 2D model; 3D model approach; GCT; destruction mechanism; standard GCT devices; standard gate-commutated thyristor devices; Anodes; Cathodes; Logic gates; Numerical models; Semiconductor device modeling; Solid modeling; Thyristors; Full wafer modeling; gate-commutated thyristor (GCT); maximum controllable current (MCC); safe operating area; thyristor;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2235442
