• DocumentCode
    9886
  • Title

    The Destruction Mechanism in GCTs

  • Author

    Lophitis, N. ; Antoniou, M. ; Udrea, F. ; Bauer, Friedhelm D. ; Nistor, I. ; Arnold, Martin ; Wikstrom, Tobias ; Vobecky, J.

  • Author_Institution
    Dept. of Eng., Univ. of Cambridge, Cambridge, UK
  • Volume
    60
  • Issue
    2
  • fYear
    2013
  • fDate
    Feb. 2013
  • Firstpage
    819
  • Lastpage
    826
  • Abstract
    This paper focuses on the causes that lead to the final destruction in standard gate-commutated thyristor (GCT) devices. A new 3-D model approach has been used for simulating the GCT which provides a deep insight into the operation of the GCT in extreme conditions. This allows drawing some conclusions on the complex mechanisms that drive these devices to destruction, previously impossible to explain using 2-D models.
  • Keywords
    semiconductor device models; thyristors; 2D model; 3D model approach; GCT; destruction mechanism; standard GCT devices; standard gate-commutated thyristor devices; Anodes; Cathodes; Logic gates; Numerical models; Semiconductor device modeling; Solid modeling; Thyristors; Full wafer modeling; gate-commutated thyristor (GCT); maximum controllable current (MCC); safe operating area; thyristor;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2012.2235442
  • Filename
    6410404
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=9886