DocumentCode
988668
Title
High-power single-longitudinal-mode operation of 1.3 ¿m DFB-DC-PBH LD
Author
Kitamura, Masayuki ; Seki, Morihiro ; Yamaguchi, Masaki ; Mito, I. ; Kobayashi, Ke. ; Kobayashi, Ko. ; Matsuoka, T.
Author_Institution
NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
Volume
19
Issue
20
fYear
1983
Firstpage
840
Lastpage
841
Abstract
CW light output power as high as 38 mW at room temperature and with a CW operable temperature as high as 80°C, both under single-longitudinal-mode operation, has been achieved for the first time in newly developed 1.3 ¿m distributed-feedback (DFB) laser diodes with a double-channel planar buried heterostructure (DC-PBH).
Keywords
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; p-n heterojunctions; semiconductor junction lasers; 1.3 micron; CW light output; DFB DH laser diode; III-V semiconductors; InGaAsP/InP; distributed-feedback; double-channel planar buried heterostructure; semiconductor lasers; single-longitudinal-mode operation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830572
Filename
4248095
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