• DocumentCode
    988668
  • Title

    High-power single-longitudinal-mode operation of 1.3 ¿m DFB-DC-PBH LD

  • Author

    Kitamura, Masayuki ; Seki, Morihiro ; Yamaguchi, Masaki ; Mito, I. ; Kobayashi, Ke. ; Kobayashi, Ko. ; Matsuoka, T.

  • Author_Institution
    NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
  • Volume
    19
  • Issue
    20
  • fYear
    1983
  • Firstpage
    840
  • Lastpage
    841
  • Abstract
    CW light output power as high as 38 mW at room temperature and with a CW operable temperature as high as 80°C, both under single-longitudinal-mode operation, has been achieved for the first time in newly developed 1.3 ¿m distributed-feedback (DFB) laser diodes with a double-channel planar buried heterostructure (DC-PBH).
  • Keywords
    III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; p-n heterojunctions; semiconductor junction lasers; 1.3 micron; CW light output; DFB DH laser diode; III-V semiconductors; InGaAsP/InP; distributed-feedback; double-channel planar buried heterostructure; semiconductor lasers; single-longitudinal-mode operation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830572
  • Filename
    4248095