Title :
Hot-electron noise generation in gallium-arsenide Schottky-barrier diodes
Author :
Keen, N.J. ; Zirath, Herbert
Author_Institution :
Max-Planck-Institut fÿr Radioastronomie, Bonn, West Germany
Abstract :
Measurements of excess (hot-electron) noise in a GaAs Schottky-barrier diode at room temperature are reported. A monotonic decrease with increasing frequency is found. It is concluded that only diode hot-electron noise at intermediate frequency contributes to the excess noise of a mixer.
Keywords :
III-V semiconductors; Schottky-barrier diodes; electron device noise; gallium arsenide; random noise; GaAs; III-V semiconductors; Schottky-barrier diodes; electron device noise; hot-electron noise; intermediate frequency; mixer excess noise; random noise; room temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830580
