Title :
Comment: Analysis of radiative and nonradiative recombination law in lightly doped InGaAsP lasers
Author :
Olshansky, R. ; Su, C.B. ; Manning, John ; Schlafer, J.
Author_Institution :
GTE Laboratories Incorporated, Waltham, USA
Keywords :
III-V semiconductors; electron-hole recombination; gallium arsenide; indium compounds; semiconductor junction lasers; III-V semiconductors; lifetime data; lightly doped InGaAsP lasers; nonradiative recombination law; radiative recombination law; semiconductor junction lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830589
