DocumentCode :
988890
Title :
High breakdown voltage AlAs/InGaAs quantum barrier varactor diodes
Author :
Reddy, Viswanath K. ; Neikirk, D.P.
Author_Institution :
Texas Univ., Austin, TX, USA
Volume :
29
Issue :
5
fYear :
1993
fDate :
3/4/1993 12:00:00 AM
Firstpage :
464
Lastpage :
466
Abstract :
Data are presented on single quantum barrier AlAs/In0.53Ga0.47As varactor diodes intended as submillimetre wavelength frequency multipliers that exhibit extremely high breakdown voltage and excellent capacitance modulation characteristics. Record breakdown voltages as high as 12 V were achieved with a composite 50AA/50AA/50AA thick In0.52Al0.48/AlAs/In0.52Al0.48As barrier sandwiched between 3000 AA(1.2*1017 cm-3) In0.53Ga0.47As depletion regions.
Keywords :
III-V semiconductors; aluminium compounds; capacitance; electric breakdown of solids; frequency multipliers; gallium arsenide; indium compounds; solid-state microwave devices; submillimetre wave devices; varactors; 12 V; AlAs-In 0.53Ga 0.47As; In 0.52Al 0.48-AlAs-In 0.52Al 0.48As; capacitance modulation characteristics; frequency multipliers; high breakdown voltage; microwave device; single quantum barrier; submillimetre wavelength; varactor diodes;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930310
Filename :
250270
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=988890
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