DocumentCode
988916
Title
Ion-implanted bubble memory device chip organization
Author
Bonyhard, Peter I. ; Nelson, T.J.
Author_Institution
Bell Laboratories, Murray Hill, NJ
Volume
18
Issue
2
fYear
1982
fDate
3/1/1982 12:00:00 AM
Firstpage
740
Lastpage
744
Abstract
Chip organization must be reconsidered when moving from conventional (Permalloy) to ion-implanted bubble memory devices. Four different schemes merit attention at this time: circumferential major loop, simple major loop, simple loop with bidirectional propagation, and "shuttle." Required bubble manipulating function properties, performance, and other advantages and disadvantages are established for all four. "Shuttle" emerges as a favorite and thereby indicates the most desirable function properties. Bidirectional propagation is shown to be highly desirable.
Keywords
Magnetic bubble device fabrication; Magnetic bubble memories; Appropriate technology; Detectors; Error analysis; Feedback; Nonvolatile memory;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1982.1061897
Filename
1061897
Link To Document