• DocumentCode
    988916
  • Title

    Ion-implanted bubble memory device chip organization

  • Author

    Bonyhard, Peter I. ; Nelson, T.J.

  • Author_Institution
    Bell Laboratories, Murray Hill, NJ
  • Volume
    18
  • Issue
    2
  • fYear
    1982
  • fDate
    3/1/1982 12:00:00 AM
  • Firstpage
    740
  • Lastpage
    744
  • Abstract
    Chip organization must be reconsidered when moving from conventional (Permalloy) to ion-implanted bubble memory devices. Four different schemes merit attention at this time: circumferential major loop, simple major loop, simple loop with bidirectional propagation, and "shuttle." Required bubble manipulating function properties, performance, and other advantages and disadvantages are established for all four. "Shuttle" emerges as a favorite and thereby indicates the most desirable function properties. Bidirectional propagation is shown to be highly desirable.
  • Keywords
    Magnetic bubble device fabrication; Magnetic bubble memories; Appropriate technology; Detectors; Error analysis; Feedback; Nonvolatile memory;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1982.1061897
  • Filename
    1061897