DocumentCode
988918
Title
Influence of parasitic inductances on transient current sharing in parallel connected synchronous rectifiers and Schottky-barrier diodes
Author
Polenov, D. ; Lutz, J. ; Pröbstle, H. ; Brösse, A.
Author_Institution
Chemnitz Univ. of Technol., Chemnitz
Volume
1
Issue
5
fYear
2007
fDate
10/1/2007 12:00:00 AM
Firstpage
387
Lastpage
394
Abstract
The transient current sharing in parallel connected Schottky-barrier diodes and MOSFET synchronous rectifiers is analysed. It is shown that, because of parasitic inductances the desired reduction of dead-time conducting losses and reverse-recovery peak current is limited, when discrete devices are used. The total amount of conducting losses in the free-wheeling circuit can increase. A reduction of switching losses in half-bridge configurations is possible because of secondary effects.
Keywords
Schottky barriers; inductance; power semiconductor diodes; rectifiers; Schottky barrier diodes; dead time conducting losses; free wheeling circuit; half bridge configurations; parallel connected synchronous rectifiers; parasitic inductances; reverse recovery peak current; switching losses; transient current sharing;
fLanguage
English
Journal_Title
Circuits, Devices & Systems, IET
Publisher
iet
ISSN
1751-858X
Type
jour
DOI
10.1049/iet-cds:20060380
Filename
4389776
Link To Document