Title :
Low threshold ridge waveguide laser at 1.55 ¿m
Author :
Kaminow, I.P. ; Stulz, L.W. ; Ko, J.-S. ; Miller, B.I. ; Feldman, R.D. ; DeWinter, J.C. ; Pollack, M.A.
Author_Institution :
Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Abstract :
Fundamental-transverse-mode ridge waveguide lasers have been operated at 1.55 ¿m with threshold current as low as 42 mA. The threshold of fabrication and performance are similar to that of 1.3 ¿m ridge lasers, including the large modulation bandwidth.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser modes; optical waveguides; semiconductor junction lasers; III-V semiconductors; InGaAsP-InP structure; fundamental transverse mode; modulation bandwidth; ridge waveguide lasers; semiconductor junction lasers; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830598
