• DocumentCode
    989021
  • Title

    GeMoW refractory ohmic contacts to n-type GaAs with In0.5Ga0.5As cap layer

  • Author

    Merkel, Kenneth G. ; Bright, V.M. ; Schauer, S.N. ; Huang, C.I. ; Robinson, G.D.

  • Author_Institution
    Wright Patterson AFB, OH, USA
  • Volume
    29
  • Issue
    5
  • fYear
    1993
  • fDate
    3/4/1993 12:00:00 AM
  • Firstpage
    480
  • Lastpage
    481
  • Abstract
    GeMoW is presented as a refractory ohmic contact to n-type GaAs with an In0.5Ga0.5As cap layer. The contact exhibits ohmic behaviour over a wide annealing temperature range from 300 to 700 degrees C. A minimum contact resistance of 0.176 Omega mm was obtained following furnace annealing at 500 degrees C.
  • Keywords
    III-V semiconductors; annealing; contact resistance; gallium arsenide; germanium alloys; indium compounds; molybdenum alloys; ohmic contacts; semiconductor-metal boundaries; tungsten alloys; 300 to 700 degC; 500 degC; GeMoW refractory ohmic contacts; GeMoW-In 0.5Ga 0.5As-GaAs; In 0.5Ga 0.5As cap layer; annealing temperature range; contact resistance; furnace annealing; n-type GaAs; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930321
  • Filename
    250281
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=989021