مرکز منطقه ای اطلاع رساني علوم و فناوري - GeMoW refractory ohmic contacts to n-type GaAs with In<sub>0.5</sub>Ga<sub>0.5</sub>As cap layer

DocumentCode :

989021

Title :

GeMoW refractory ohmic contacts to n-type GaAs with In_0.5Ga_0.5As cap layer

Author :

Merkel, Kenneth G. ; Bright, V.M. ; Schauer, S.N. ; Huang, C.I. ; Robinson, G.D.

Author_Institution :

Wright Patterson AFB, OH, USA

Volume :

Issue :

fYear :

1993

fDate :

3/4/1993 12:00:00 AM

Firstpage :

480

Lastpage :

481

Abstract :

GeMoW is presented as a refractory ohmic contact to n-type GaAs with an In_0.5Ga_0.5As cap layer. The contact exhibits ohmic behaviour over a wide annealing temperature range from 300 to 700 degrees C. A minimum contact resistance of 0.176 Omega mm was obtained following furnace annealing at 500 degrees C.

Keywords :

III-V semiconductors; annealing; contact resistance; gallium arsenide; germanium alloys; indium compounds; molybdenum alloys; ohmic contacts; semiconductor-metal boundaries; tungsten alloys; 300 to 700 degC; 500 degC; GeMoW refractory ohmic contacts; GeMoW-In_0.5Ga_0.5As-GaAs; In_0.5Ga_0.5As cap layer; annealing temperature range; contact resistance; furnace annealing; n-type GaAs; semiconductors;

fLanguage :

English

Journal_Title :

Electronics Letters

Publisher :

iet

ISSN :

0013-5194

Type :

jour

DOI :

10.1049/el:19930321

Filename :

250281

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=989021