Effect of Coupled Double-Quantum-Well Design on Pump-Induced Refractive-Index Change in AlAsSb–InGaAs–AlAs Optical Waveguides

Author

Lim, C.G.

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba

Volume

44

Issue

11

fYear

2008

Firstpage

1003

Lastpage

1008

Abstract

Optimization of the AlAsSb-InGaAs-AlAs coupled double-quantum-wells in optical waveguide core for optimal pump-induced refractive-index change indicates that thin AlAs center barrier leads to larger refractive-index change, and the InGaAs double-quantum-wells have an optimum thickness of which maximum refractive-index change is obtained. Analysis shows that the cross phase-modulation efficiency of these optical waveguides is highly dependent on optical confinement and is limited to approximately 0.05 rad/pJ in the 1550 nm region as far as the cross phase-modulation based on free-carrier mass dispersion effect is concerned.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optics; optical dispersion; optical modulation; optical pumping; optical waveguides; phase modulation; quantum well devices; refractive index; AlAsSb-InGaAs-AlAs; AlAsSb-InGaAs-AlAs waveguides; InGaAs double-quantum-wells; coupled double-quantum-well design; cross phase-modulation efficiency; free-carrier mass dispersion effect; optical confinement; optical waveguides; pump-induced refractive-index change; wavelength 1550 nm; Optical coupling; Optical design; Optical devices; Optical pumping; Optical refraction; Optical signal processing; Optical waveguides; Optical wavelength conversion; Ultrafast optics; Waveguide transitions; Coupled double-quantum-well; free-carrier mass dispersion; refractive-index change;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2008.2001930

Filename

4674639