Active Region Cascading for Improved Performance in InAs–GaSb Superlattice LEDs

Author

Koerperick, Edwin J. ; Olesberg, Jonathon T. ; Hicks, James L. ; Prineas, John P. ; Boggess, Thomas F., Jr.

Author_Institution

Dept. of Chem. & Opt. Sci. & Technol. Center, Iowa Univ., Iowa City, IA

Volume

44

Issue

12

fYear

2008

Firstpage

1242

Lastpage

1247

Abstract

Cascading of active regions in InAs-GaSb superlattice light-emitting diodes (LEDs) grown by molecular beam epitaxy is demonstrated as an effective means of increasing optical emission. Devices were fabricated into 120 x 120 mum² mesas to demonstrate suitability for high resolution projection systems. Devices with 1, 4, 8, and 16 stages were designed for midwave infrared emission at 3.8 mum operating at 77 K, and quasi-continuous-wave output powers in excess of 900 muW from a 16-stage LED have been demonstrated. External quantum efficiency is shown to improve substantially with cascading, approaching 10% for a 16-stage device.

Keywords

III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; semiconductor superlattices; InAs-GaSb; active region cascading; light-emitting diodes; molecular beam epitaxy; power 900 muW; quantum efficiency; superlattice LED; temperature 77 K; wavelength 3.8 mum; Astronomy; Biomedical optical imaging; Chemical technology; Cities and towns; Infrared detectors; Light emitting diodes; Optical superlattices; Physics; Sensor arrays; Space technology; Electroluminescence; light-emitting diodes (LEDs); semiconductor growth; semiconductor superlattices;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2008.2003145

Filename

4674643