• DocumentCode
    989118
  • Title

    Organic-on-organic semiconductor heterojunctions: building block for the next generation of optoelectronic devices

  • Author

    Forrest, S.R.

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
  • Volume
    5
  • Issue
    3
  • fYear
    1989
  • fDate
    5/1/1989 12:00:00 AM
  • Firstpage
    33
  • Lastpage
    37
  • Abstract
    A novel class of optoelectronic devices utilizing thin films of stable crystalline organic semiconductors layered onto inorganic semiconductor substrates is described. The electrical properties of these devices are determined by the energy barrier at the heterojunction contact between the organic and inorganic materials, and in many ways are similar to those of ideal diffused-junction inorganic semiconductor devices. The organic materials can be layered onto semiconductor substrates without inducing large strains in either material, hence allowing a wide range of material combinations with a similarly broad range of optoelectronic functions to be realized. As examples, high-bandwidth photodetectors and field-effect transistors made using organic/inorganic semiconductor heterojunctions are discussed. Modification of the optical and electronic properties of the organic films by irradiation with energetic electron and ion beams is considered.<>
  • Keywords
    field effect transistors; integrated optoelectronics; organic semiconductors; p-n heterojunctions; photodetectors; electrical properties; electron beams; energy barrier; field-effect transistors; heterojunction contact; high-bandwidth photodetectors; inorganic semiconductor substrates; ion beams; material combinations; optoelectronic devices; optoelectronic functions; stable crystalline organic semiconductors; strains; Crystallization; Heterojunctions; Optical films; Optical materials; Optoelectronic devices; Organic materials; Semiconductor materials; Semiconductor thin films; Substrates; Thin film devices;
  • fLanguage
    English
  • Journal_Title
    Circuits and Devices Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    8755-3996
  • Type

    jour

  • DOI
    10.1109/101.25029
  • Filename
    25029