Title :
13 Gbit/s Si bipolar preamplifier for optical front ends
Author :
Neuhauser, M. ; Rein, H.-M. ; Wernz, H. ; Felder, A.
Author_Institution :
Ruhr Univ., Bochum, Germany
fDate :
3/4/1993 12:00:00 AM
Abstract :
A preamplifier IC for a 10 Gbit/s optical fibre link was realised in a 0.8 mu m silicon bipolar preproduction technology. Data rates up to 13 Gbit/s at high transimpedance (615 Omega ) and low noise (10.5 pA/ square root (Hz) for 10 Gbit/s) were achieved. The frequency response can be individually optimised by adjusting a novel on-chip network via external potentiometers.
Keywords :
bipolar integrated circuits; digital communication systems; elemental semiconductors; frequency response; linear integrated circuits; optical receivers; preamplifiers; silicon; 0.8 micron; 10 Gbit/s; 13 Gbit/s; Si bipolar preamplifier; bipolar preproduction technology; external potentiometers; frequency response; onchip network adjustment; optical fibre link; optical front ends; preamp IC;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930329
