• DocumentCode
    989186
  • Title

    High gain 28 GHz coplanar waveguide monolithic amplifier on InP substrate

  • Author

    Dickmann, Juergen ; Kosslowski, S. ; Maile, B.E. ; Haspeklo, H. ; Geyer, A. ; Riepe, K. ; Schurr, A. ; Daembkes, H. ; Kunzel, H. ; Bottcher, J.

  • Author_Institution
    Daimlet Benz AG, Ulm, Germany
  • Volume
    29
  • Issue
    5
  • fYear
    1993
  • fDate
    3/4/1993 12:00:00 AM
  • Firstpage
    493
  • Lastpage
    495
  • Abstract
    A three stage 28 GHz InP MMIC coplanar waveguide amplifier with 27 dB gain over the frequency band from 26 to 32 GHz has been developed. The circuit is fully passivated with Si3N4 and includes all necessary elements for input/output matching and bias decoupling. As active devices 0.25 mu m lattice matched InAlAs/InGaAs HEMTs were used. The chip dimensions are 2.4*2.0 mm2.
  • Keywords
    III-V semiconductors; MMIC; field effect integrated circuits; high electron mobility transistors; indium compounds; microwave amplifiers; strip line components; 0.25 micron; 26 to 32 GHz; 27 dB; 28 GHz; CPW; HEMTs; InAlAs-InGaAs-InP; InP substrate; MMIC; SHF; Si 3N 4 passivation; bias decoupling; coplanar waveguide; input/output matching; lattice matched devices; monolithic amplifier; three stage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930330
  • Filename
    250295
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=989186