Title :
High gain 28 GHz coplanar waveguide monolithic amplifier on InP substrate
Author :
Dickmann, Juergen ; Kosslowski, S. ; Maile, B.E. ; Haspeklo, H. ; Geyer, A. ; Riepe, K. ; Schurr, A. ; Daembkes, H. ; Kunzel, H. ; Bottcher, J.
Author_Institution :
Daimlet Benz AG, Ulm, Germany
fDate :
3/4/1993 12:00:00 AM
Abstract :
A three stage 28 GHz InP MMIC coplanar waveguide amplifier with 27 dB gain over the frequency band from 26 to 32 GHz has been developed. The circuit is fully passivated with Si3N4 and includes all necessary elements for input/output matching and bias decoupling. As active devices 0.25 mu m lattice matched InAlAs/InGaAs HEMTs were used. The chip dimensions are 2.4*2.0 mm2.
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; high electron mobility transistors; indium compounds; microwave amplifiers; strip line components; 0.25 micron; 26 to 32 GHz; 27 dB; 28 GHz; CPW; HEMTs; InAlAs-InGaAs-InP; InP substrate; MMIC; SHF; Si 3N 4 passivation; bias decoupling; coplanar waveguide; input/output matching; lattice matched devices; monolithic amplifier; three stage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930330
