Title :
Photochemical microetching of GaAs
Author :
Mottet, Serge ; Henry, Leanne
Author_Institution :
CNET Lannion B, ICM/TOH, Lannion, France
Abstract :
Controlled etching of III-V compound semiconductors is an important step in the fabrication of discrete and integrated components. We have developed a system which allows a 1.3 ¿m diameter light spot to be obtained. Displacement of the spot on the sample and speed are controlled by a computer for any desired figure. The light spot is used to photochemically etch GaAs immersed in aqueous solutions.
Keywords :
III-V semiconductors; etching; gallium arsenide; 1.3 micron diameter light spot; GaAs; III-V semiconductor; aqueous solutions; etching; photochemical microetching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830628
