Title :
Au(Pt)Pd ohmic contacts to p-ZnTe
Author :
Ozawa, Masayoshi ; Hiei, F. ; Ishibashi, A. ; Akimoto, Katsuhiro
Author_Institution :
Sony Corp., Yokohama, Japan
fDate :
3/4/1993 12:00:00 AM
Abstract :
Au(Pt)Pd ohmic contacts to p-ZnTe are reported, with a determination of the optimum annealing temperature and the optimum Pd layer thickness. The specific contact resistance, measured by the transmission line method, was as low as 5*10-6 Omega cm-2. This value of the specific contact resistance is two orders of magnitude lower than that of Au or Au/Pt contact to p-ZnTe.
Keywords :
II-VI semiconductors; annealing; contact resistance; gold; ohmic contacts; palladium; platinum; semiconductor-metal boundaries; zinc compounds; Au-Pt-Pd-ZnTe; ohmic contacts; optimum Pd layer thickness; optimum annealing temperature; p-type semiconductor; specific contact resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930337
