• DocumentCode
    989273
  • Title

    Au(Pt)Pd ohmic contacts to p-ZnTe

  • Author

    Ozawa, Masayoshi ; Hiei, F. ; Ishibashi, A. ; Akimoto, Katsuhiro

  • Author_Institution
    Sony Corp., Yokohama, Japan
  • Volume
    29
  • Issue
    5
  • fYear
    1993
  • fDate
    3/4/1993 12:00:00 AM
  • Firstpage
    503
  • Lastpage
    505
  • Abstract
    Au(Pt)Pd ohmic contacts to p-ZnTe are reported, with a determination of the optimum annealing temperature and the optimum Pd layer thickness. The specific contact resistance, measured by the transmission line method, was as low as 5*10-6 Omega cm-2. This value of the specific contact resistance is two orders of magnitude lower than that of Au or Au/Pt contact to p-ZnTe.
  • Keywords
    II-VI semiconductors; annealing; contact resistance; gold; ohmic contacts; palladium; platinum; semiconductor-metal boundaries; zinc compounds; Au-Pt-Pd-ZnTe; ohmic contacts; optimum Pd layer thickness; optimum annealing temperature; p-type semiconductor; specific contact resistance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930337
  • Filename
    250302
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=989273