• DocumentCode
    989372
  • Title

    Optimum choice of Si FET or GaAs FET as first-stage active device for very low-noise optical receivers with medium bandwidths

  • Author

    Schmidt Auf Altenstadt, W.

  • Author_Institution
    Technische Universitÿt Mÿnchen, Lehrstuhl fÿr Technische Elektronik, Mÿnchen, West Germany
  • Volume
    19
  • Issue
    22
  • fYear
    1983
  • Firstpage
    937
  • Lastpage
    938
  • Abstract
    The use of GaAs FETs as the first stage in transimpedance amplifiers is common practice for wide-bandwidth systems up to 1 Gbit/s. For medium- or low-bandwidth systems GaAs FETs are not necessarily superior to Si FETs. A rather straightforward but sufficiently accurate way is shown for rapid evaluation of the best choice under given conditions.
  • Keywords
    field effect transistors; gallium arsenide; optical communication equipment; receivers; silicon; GaAs FET; Si FET; first-stage active device; medium bandwidths; optical communication equipment; transimpedance amplifiers; very low-noise optical receivers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830639
  • Filename
    4248176
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=989372