Title :
High-speed infra-red modulator with multilayered pn-junctions
Author :
Yamada, Shigeru ; Urisu, T. ; Mizushima, Y.
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
A high-speed infra-red modulator having a GaAs multilayered pn-junction and resonator structure is proposed. Device operation is based on infra-red interaction with injected carriers at each junction. The performance calculation reveals an amplitude of 50%, and an approximately ¿ phase modulation depth with expected bandwidth in the gigahertz order.
Keywords :
III-V semiconductors; gallium arsenide; optical modulation; p-n homojunctions; photoelectric devices; GaAs; high speed infrared modulator; multilayered p-n junctions; resonator structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830641
