Aluminium-free GaAs/GaInAsP quantum well lasers

Author

Zhang, Ge ; Nappi, J. ; Ovtchinnikov, A. ; Asonen, H.

Author_Institution

Tampere Univ. of Technol., Finland

Volume

29

Issue

5

fYear

1993

fDate

3/4/1993 12:00:00 AM

Firstpage

429

Lastpage

431

Abstract

Al-free GaAs/GaInAsP separate-confinement-heterostructure single-quantum-well lasers are reported. The laser structure was grown by gas-source molecular beam epitaxy. A low threshold current density of 207 A/cm² and a high characteristic temperature of 167 K were achieved for the uncoated broad-area lasers. The transparency current density was 58 A/cm² and gain coefficient 0.039 cm mu m A^-1. The internal quantum efficiency and internal waveguide loss were 86% and 5.7 cm^-1, respectively. The results are comparable to those obtained for GaAs/AlGaAs quantum well lasers.

Keywords

III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor lasers; 0.87 micron; 167 K; 22 mA; GaAs-GaInAsP quantum well lasers; broad-area lasers; characteristic temperature; gain coefficient; gas-source molecular beam epitaxy; internal quantum efficiency; internal waveguide loss; separate-confinement-heterostructure single-quantum-well lasers; threshold current density; transparency current density;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19930287

Filename

250316