Title :
High quality 0.98 mu m GaInAs/GaAs/GaInP lasers grown by CBE using tertiarybutylarsine and tertiarybutylphosphine
Author :
Garcia, J.C. ; Maurel, P. ; Hirtz, J.P.
Author_Institution :
Thomson CSF, Orsay, France
fDate :
3/4/1993 12:00:00 AM
Abstract :
High quality GaInAs/GaAs/GaInP laser structures were grown by chemical beam epitaxy using tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) under pulsed conditions. For a 300 mu m long cavity, a threshold current density of 390 A/cm2 and external quantum efficiency of 0.6 W/A (two facets) were obtained, which are typical for this kind of structure. This demonstrates the suitability of TBP and TBAs as substitutes of arsine and phosphine in chemical beam epitaxy for laser fabrication.
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor lasers; 0.98 micron; CBE growth; GaAs substrate; GaInAs-GaAs-GaInP laser structures; chemical beam epitaxy; external quantum efficiency; pulsed light output power; tertiarybutylarsine; tertiarybutylphosphine; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930289
