Title :
Analytic transformation of the generation-recombination centres in the transmission-line equivalent-circuit model of a semiconductor
Author_Institution :
National University of Singapore, Department of Electrical Engineering, Singapore
Abstract :
A simple analytic transformation of the transmission-line equivalent-circuit model into a ¿-network is described. The non-SRH (Shockley-Read-Hall) volume generation current at the node Vn which is eliminated, is split to the other nodes. This simpler equivalent-circuit model is suited for device analysis, with time-dependent optical excitation.
Keywords :
electron-hole recombination; equivalent circuits; semiconductor device models; semiconductors; Shockley-Read-Hall; analytic transformation; generation-recombination centres; non-SRH generation current; semiconductor; transmission-line equivalent-circuit model; ¿-network;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830646
