DocumentCode :
989469
Title :
Triggering pulse durations in transferred electron devices
Author :
Carruthers, T.F. ; Weller, J.F.
Author_Institution :
Naval Research Laboratory, Washington, USA
Volume :
19
Issue :
23
fYear :
1983
Firstpage :
955
Lastpage :
956
Abstract :
Pairs of 1.0 ps optical pulses, each focused onto a different region of a planar GaAs transferred electron device, were separated by a variable delay time ¿ to initiate and then inhibit dipole domain formation. The minimum pulse durations which could trigger domains were thus observed; the minimum value of ¿ which generated domains in the device studied was 7 ± 3 ps.
Keywords :
Gunn devices; III-V semiconductors; gallium arsenide; GaAs; III-V semiconductors; TEDs; dipole domain formation; optical pulses; pulse durations; transferred electron devices; variable delay time;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19830649
Filename :
4248187
Link To Document :
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