Title :
Triggering pulse durations in transferred electron devices
Author :
Carruthers, T.F. ; Weller, J.F.
Author_Institution :
Naval Research Laboratory, Washington, USA
Abstract :
Pairs of 1.0 ps optical pulses, each focused onto a different region of a planar GaAs transferred electron device, were separated by a variable delay time ¿ to initiate and then inhibit dipole domain formation. The minimum pulse durations which could trigger domains were thus observed; the minimum value of ¿ which generated domains in the device studied was 7 ± 3 ps.
Keywords :
Gunn devices; III-V semiconductors; gallium arsenide; GaAs; III-V semiconductors; TEDs; dipole domain formation; optical pulses; pulse durations; transferred electron devices; variable delay time;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830649