DocumentCode :
989539
Title :
Effects of spacer layer elastic properties on metallic thin film edge-induced stress gradients in bubble memory devices
Author :
Gill, H.S. ; George, P.K. ; Tuxford, A.M.
Author_Institution :
Hewlett-Packard´´s Physical Sciences Laboratory, Palo Alto, CA
Volume :
18
Issue :
5
fYear :
1982
fDate :
9/1/1982 12:00:00 AM
Firstpage :
1004
Lastpage :
1007
Abstract :
It is well-known that metallization edge-induced stresses can change the uniaxial magnetic anisotropy of a liquid phase epitaxial (LPE) garnet film near the metallization edge. We have investigated this magnetostrictive interaction of patterned metallic films with ion-implanted LPE films by using several different spacer layers such as polyimide, SiO2 , Si3 N4 , and combinations of polyimide and SiO2 beneath a Cr-Cu-Cr conductor pattern. It is concluded that the stress eliminating capability of a spacer depends on the hardness parameter 
where 
are Young\´s moduli and 
are Poisson\´s ratios for the spacer and metallic film, respectively. The polyimide spacer with 
dyn/cm2and with 
transmits an order of magnitude of smaller stress than a SiO2 spacer with 
with the stress being more uniformly distributed across the spacer.
where are Young\´s moduli and are Poisson\´s ratios for the spacer and metallic film, respectively. The polyimide spacer with dyn/cm2and with transmits an order of magnitude of smaller stress than a SiO with the stress being more uniformly distributed across the spacer.Keywords :
Magnetic anisotropy; Magnetic bubble memories; Anisotropic conductive films; Garnet films; Magnetic anisotropy; Magnetic films; Magnetic liquids; Metallization; Polyimides; Semiconductor films; Stress; Thin film devices;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1982.1061958
Filename :
1061958
Link To Document :
