Effect of auger recombination on the threshold characteristics of gain-guided InGaAsP lasers

Experimental and theoretical results are presented to study the effect of Auger recombination on the threshold current of gain-guided InGaAsP lasers. A comparison of theory and experiment suggests that Auger recombination should be included for a reasonable agreement between them. It is shown that a rapid increase of the threshold current for narrow stripes is due to the combined effect of index anti-guiding and Auger recombination. Our deduced values of the Auger coefficient at 1.3 and 1.55 ¿m indicate that it increases rapidly with decreasing bandgap.