Title :
16 Gbit/s multiplexer IC using double mesa Si/SiGe heterojunction bipolar transistors
Author :
Schreiber, H.-U. ; Albers, J.N. ; Bosch, B.G.
Author_Institution :
Ruhr-Univ., Bochum, Germany
Abstract :
A double mesa Si/SiGe heterojunction bipolar transistor (HBT) was developed for application in integrated circuits. The HBT is characterised by an emitter base heterojunction and consequently by a high base doping concentration. By using these transistors an integrated digital circuit, a multiplexer, was implemented. The measured bit rate of this first Si/SiGe HBT circuit was 16 Gbit/s.
Keywords :
Ge-Si alloys; bipolar integrated circuits; digital integrated circuits; elemental semiconductors; heterojunction bipolar transistors; multiplexing equipment; silicon; 16 Gbit/s; Si-SiGe; double mesa Si/SiGe heterojunction bipolar transistors; emitter base heterojunction; high base doping concentration; integrated digital circuit; multiplexer IC;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931468
