Title :
Room-temperature self-organised In0.5Ga0.5As quantum dot laser on silicon
Author :
Mi, Z. ; Bhattacharya, P. ; Yang, J. ; Pipe, K.P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
fDate :
6/23/2005 12:00:00 AM
Abstract :
The first room-temperature operation of In0.5Ga0.5As quantum dot lasers grown directly on Si substrates with a thin (≤2 μm) GaAs buffer layer is reported. The devices are characterised by Jth∼1500 A/cm2, output power >50 mW, and large T0 (244 K) and constant output slope efficiency (≥0.3 W/A) in the temperature range 5-95°C.
Keywords :
III-V semiconductors; buffer layers; gallium arsenide; indium compounds; quantum dot lasers; silicon; 5 to 95 C; In0.5Ga0.5As-GaAs-Si; buffer layer; room-temperature operation; self-organised quantum dot laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20051558
