Title :
High-performance singlemode InGaNAs/GaAs laser
Author :
Peng, C.S. ; Laine, N. ; Konttinen, J. ; Karirinne, S. ; Jouhti, T. ; Pessa, M.
Author_Institution :
Optoelectronics Res. Centre, Tampere Univ. of Technol., Finland
fDate :
5/13/2004 12:00:00 AM
Abstract :
Performance characteristics of an InGaNAs/GaAs ridge-waveguide in-plane laser diode, which is grown by molecular beam epitaxy, are reported. The laser emits at a wavelength of 1.262 μm in a single lateral mode, launching an output up to 240 mW at 20°C and 20 mW at 120°C. The threshold is 15 mA at 20°C, corresponding to a threshold current density of 313 A/cm2.
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; laser modes; molecular beam epitaxial growth; quantum well lasers; 1.262 micron; 120 C; 120 degC; 20 degC; 20 mW; 240 mW; InGaNAs-GaAs; InGaNAs/GaAs ridge waveguide in plane laser diode; high performance singlemode InGaNAs/GaAs laser; laser emission; molecular beam epitaxial growth; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040388
