Title :
Semiconductor laser linewidth broadening due to 1/f carrier noise
Author :
O´Mahony, M.J. ; Henning, I.D.
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Abstract :
The effect of low frequency (1/f) carrier noise on the linewidth of a semiconductor laser is investigated. Theoretical results suggest that broadening is strongly dependent on the 3 dB corner frequency of the 1/f noise. As an example, a linewidth of 80 MHz broadens to 110 MHz with a 5 MHz corner frequency.
Keywords :
laser frequency stability; random noise; semiconductor junction lasers; 1/f carrier noise; 3 dB corner frequency; LF noise; frequency stability; linewidth broadening; random noise; semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830679
