Integrable InGaAs/GaAs vertical-cavity surface-emitting lasers

Author

Thibeault, Brian J. ; Scott, J.W. ; Peters, M.G. ; Peters, F.H. ; Young, D.B. ; Coldren, Larry A.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

29

Issue

25

fYear

1993

Firstpage

2197

Lastpage

2199

Abstract

A new electrically isolated bottom-emission vertical-cavity surface-emitting laser structure with a novel contacting method is demonstrated. The structure is grown on semi-insulating material and contacts are made to an n-type intracavity contact layer and the top of a low-resistance Al_0.67Ga_0.33As/GaAs p-type distributed Bragg reflector. This structure offers the advantages of device isolation and low parasitic capacitance without sacrificing performance. Small devices (10 mu m or less in diameter) perform as well as the best lasers reported in the literature.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; semiconductor lasers; Al_0.67Ga_0.33As-GaAs; InGaAs-GaAs; InGaAs/GaAs vertical-cavity surface-emitting lasers; device isolation; electrically isolated bottom-emission VCSEL structure; low parasitic capacitance; n-type intracavity contact layer; p-type distributed Bragg reflector; semi-insulating material;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19931476

Filename

250357