Title :
Integrable InGaAs/GaAs vertical-cavity surface-emitting lasers
Author :
Thibeault, Brian J. ; Scott, J.W. ; Peters, M.G. ; Peters, F.H. ; Young, D.B. ; Coldren, Larry A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
A new electrically isolated bottom-emission vertical-cavity surface-emitting laser structure with a novel contacting method is demonstrated. The structure is grown on semi-insulating material and contacts are made to an n-type intracavity contact layer and the top of a low-resistance Al0.67Ga0.33As/GaAs p-type distributed Bragg reflector. This structure offers the advantages of device isolation and low parasitic capacitance without sacrificing performance. Small devices (10 mu m or less in diameter) perform as well as the best lasers reported in the literature.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; semiconductor lasers; Al 0.67Ga 0.33As-GaAs; InGaAs-GaAs; InGaAs/GaAs vertical-cavity surface-emitting lasers; device isolation; electrically isolated bottom-emission VCSEL structure; low parasitic capacitance; n-type intracavity contact layer; p-type distributed Bragg reflector; semi-insulating material;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931476
