Title :
Modeling hysteretic current-voltage characteristics for resonant tunneling diodes
Author :
Shieh, Ming-Huei ; Lin, Hung Chang
Author_Institution :
Adv. Micro Devices Inc., Sunnyvale, CA, USA
fDate :
9/1/1995 12:00:00 AM
Abstract :
A simple macro circuit is described to model the hysteretic current-voltage characteristics of resonant tunneling diodes for SPICE simulation. The switch model in SPICE can be utilized to simulate the hysteretic characteristics. A multistate “hysteretic” memory cell based on resonant tunneling diodes with hysteretic current-voltage characteristic is also described and simulated using the proposed macro circuit model. The technique can also be used to model any hysteretic characteristic in general
Keywords :
SPICE; circuit analysis computing; digital simulation; resonant tunnelling diodes; semiconductor device models; semiconductor switches; SPICE simulation; hysteretic current-voltage characteristics; macro circuit model; multistate hysteretic memory cell; resonant tunneling diodes; switch model; Capacitance; Circuit simulation; Current-voltage characteristics; Diodes; Hysteresis; Integrated circuit modeling; RLC circuits; Resonant tunneling devices; SPICE; Switches;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
