DocumentCode
989858
Title
94 GHz high power performances of InAs0.4P0.6 channel HEMTs on InP
Author
Medjdoub, F. ; Zaknoune, M. ; Wallart, X. ; Gaquière, C. ; Theron, D.
Author_Institution
Dept. Hyperfrequences et Semi-conducteurs, UMR-CNRS, Villeneuve d´´Ascq, France
Volume
41
Issue
13
fYear
2005
fDate
6/23/2005 12:00:00 AM
Firstpage
769
Lastpage
771
Abstract
High power performances at 94 GHz using an innovating large bandgap InAsP channel high electron mobility transistor on InP substrate containing an InP/AlInAs composite barrier are reported. This 100 nm gate HEMT exhibits a high current density of 600 mA/mm, and an extrinsic transconductance of 850 mS/mm. The off state breakdown is greater than 5.5 V and defined at a gate current density of 1 mA/mm. At 94 GHz, they demonstrated a maximum output power of 260 mW/mm at 3 V of drain voltage with 5.9 dB power gain and a power added efficiency (PAE) of 11%. This is believed to be the best combination between output power density and power gain of any InP HEMT reported at this frequency.
Keywords
III-V semiconductors; aluminium compounds; energy gap; indium compounds; millimetre wave field effect transistors; power HEMT; semiconductor device breakdown; 100 nm; 3 V; 5.9 dB; 94 GHz; HEMT; InAs0.4P0.6-InP; InP; InP-AlInAs; composite barrier; current density; extrinsic transconductance; high electron mobility transistor; high power performance; large bandgap channel; maximum output power; offstate breakdown; power added efficiency; power gain;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20051511
Filename
1459894
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