Radiative and nonradiative recombination law in lightly doped InGaAsP lasers

We analyse data relating to radiative and nonradiative recombination in a 1.3 ¿m InGaAsP laser operating below threshold. The results show that with a lightly doped active region the radiative recombination coefficient decreases with increasing carrier concentration in accordance with previous theoretical results. Further, they indicate that the Auger nonradiative recombination is relatively small.