DocumentCode
989895
Title
Stable 20 W/mm AlGaN-GaN MOSHFET
Author
Simin, G. ; Adivarahan, V. ; Yang, J. ; Koudymov, A. ; Rai, S. ; Khan, M.Asif
Author_Institution
Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA
Volume
41
Issue
13
fYear
2005
fDate
6/23/2005 12:00:00 AM
Firstpage
774
Lastpage
775
Abstract
The first stable operation (>100 h) of a AlGaN/GaN metal-oxide semiconductor heterostructure field effect transistor (MOSHFET) at very high RF power levels (∼20 W/mm at 2 GHz and 55 V drain bias) is reported. These record values are attributed to a current collapse-free performance resulting from using a field-plate over a leaky dielectric, and to the low forward gate currents owing to the MOS-design.
Keywords
III-V semiconductors; MOSFET; UHF field effect transistors; aluminium compounds; gallium compounds; wide band gap semiconductors; 2 GHz; 20 W; 55 V; AlGaN-GaN; MOSHFET; current collapse-free performance; leaky dielectric; low forward gate currents; metal-oxide semiconductor heterostructure field effect transistor; stable operation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20051203
Filename
1459897
Link To Document