Title :
Stable 20 W/mm AlGaN-GaN MOSHFET
Author :
Simin, G. ; Adivarahan, V. ; Yang, J. ; Koudymov, A. ; Rai, S. ; Khan, M.Asif
Author_Institution :
Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA
fDate :
6/23/2005 12:00:00 AM
Abstract :
The first stable operation (>100 h) of a AlGaN/GaN metal-oxide semiconductor heterostructure field effect transistor (MOSHFET) at very high RF power levels (∼20 W/mm at 2 GHz and 55 V drain bias) is reported. These record values are attributed to a current collapse-free performance resulting from using a field-plate over a leaky dielectric, and to the low forward gate currents owing to the MOS-design.
Keywords :
III-V semiconductors; MOSFET; UHF field effect transistors; aluminium compounds; gallium compounds; wide band gap semiconductors; 2 GHz; 20 W; 55 V; AlGaN-GaN; MOSHFET; current collapse-free performance; leaky dielectric; low forward gate currents; metal-oxide semiconductor heterostructure field effect transistor; stable operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20051203
