• DocumentCode
    989908
  • Title

    High frequency GaAs/Al0.25Ga0.75As heterojunction bipolar transistors with transparent indium-tin-oxide emitter contacts

  • Author

    Li, W.Q. ; Karakucuk, M. ; Kulman, J. ; East, J.R. ; Haddad, G.I. ; Bhattacharya, P.K.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
  • Volume
    29
  • Issue
    25
  • fYear
    1993
  • Firstpage
    2223
  • Lastpage
    2225
  • Abstract
    The authors have characterised a GaAs/Al0.25Ga0.75As heterojunction bipolar transistor (HBT) with transparent indium tin oxide (ITO) emitter contacts. An ITO to n-GaAs contact resistance of 2*10-7 Omega /cm2 was measured with 50AA of indium as a prelayer. HBT devices with fT=18GHZ, fmax=20GHz, and optical pulse response of 80ps FWHM have been measured. The results indicate that this device technology is a good candidate for application in optically controlled microwave circuits.
  • Keywords
    III-V semiconductors; aluminium compounds; contact resistance; gallium arsenide; heterojunction bipolar transistors; indium compounds; ohmic contacts; phototransistors; solid-state microwave devices; tin compounds; 18 GHz; 20 GHz; GaAs-Al 0.25Ga 0.75As; GaAs/Al 0.25Ga 0.75As heterojunction bipolar transistors; HBT devices; ITO-GaAs; InSnO-GaAs; contact resistance; current gain; ohmic contact; optical pulse response; optically controlled microwave circuits; photoresponse; phototransistor; power gain; transparent ITO emitter contacts;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931493
  • Filename
    250368
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=989908