Title :
AlGaAs/GaAs multiquantum-well (MQW) laser applied to monolithic integration with FET driver
Author :
Yamakoshi, Shigenobu ; Sanada, Toshiyuki ; Wada, O. ; Fujii, Teruya ; Sakurai, Takayasu
Author_Institution :
Fujitsu Ltd., Atsugi, Japan
Abstract :
A ridge-waveguide AlGaAs/GaAs multiquantum-well (MQW) laser has been monolithically integrated with two MESFETs on a semi-insulating GaAs substrate. The laser was grown in an etched groove to realise a nearly planar horizontal arrangement with FETs. This MQW laser was found to successfully achieve a CW operation with a lowthreshold current of 20 mA at room temperature.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; field effect integrated circuits; gallium arsenide; semiconductor junction lasers; AlGaAs/GaAs multiquantum-well laser; CW operation; FET driver; MESFETs; MQW laser; monolithic integration; optoelectronic integrated circuit; planar horizontal arrangement; ridge-waveguide; semiconductor laser; semiinsulating GaAs substrate; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830691
