DocumentCode
989911
Title
AlGaAs/GaAs multiquantum-well (MQW) laser applied to monolithic integration with FET driver
Author
Yamakoshi, Shigenobu ; Sanada, Toshiyuki ; Wada, O. ; Fujii, Teruya ; Sakurai, Takayasu
Author_Institution
Fujitsu Ltd., Atsugi, Japan
Volume
19
Issue
24
fYear
1983
Firstpage
1020
Lastpage
1021
Abstract
A ridge-waveguide AlGaAs/GaAs multiquantum-well (MQW) laser has been monolithically integrated with two MESFETs on a semi-insulating GaAs substrate. The laser was grown in an etched groove to realise a nearly planar horizontal arrangement with FETs. This MQW laser was found to successfully achieve a CW operation with a lowthreshold current of 20 mA at room temperature.
Keywords
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; field effect integrated circuits; gallium arsenide; semiconductor junction lasers; AlGaAs/GaAs multiquantum-well laser; CW operation; FET driver; MESFETs; MQW laser; monolithic integration; optoelectronic integrated circuit; planar horizontal arrangement; ridge-waveguide; semiconductor laser; semiinsulating GaAs substrate; threshold current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830691
Filename
4248240
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